State of the Art Growth Facilities
Welcome to the Substrate Engineering Laboratory (SEL) at MIT website! The SEL was founded in 2004 to develop electronic materials integration technologies that will enable the high performance and functionality of future generations of electronic and optoelectronic integrated circuits. The SEL is a state-of-the-art facility for epitaxial growth of semiconductor heterostructures by chemical vapor deposition (CVD). Research at the SEL focuses on the development of lattice-mismatched semiconductor material systems such as Si/SiGe, GaAs/InGaAs, GaP/InGaP, and GaAs/GaSb. In addition to the MIT research community, outside users can also obtain growth services from this facility.
Please proceed directly to our Services page for information on our foundry model..
